FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.
5Ω Features
• RDS(on) = 1.
25Ω ( Typ.
)@ VGS = 10V, ID = 2A • Low gate charge ( Typ.
11nC) • Low Crss ( Typ.
5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode.
These devices are well suited for high effi...