SPN6099
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6099 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 60V/80A,RDS(ON)= 4.
0mΩ@VGS= 10V 60V/40A,RDS(ON)= 4.
2mΩ@VGS= 6.
0V 60V/10A,RDS(ON)= 4.
4mΩ@VGS= 4.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L pack...