SPN4506
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 40V/10A,RDS(ON)=10mΩ@VGS=10V 40V/ 8A,RDS(ON)=12mΩ@VGS=4.
5V 40V/ 6A,RDS(ON)=16mΩ@VGS=2.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
A...