FJD3305H1 —
NPN Silicon
Transistor
April 2009
FJD3305H1
NPN Silicon
Transistor
High Voltage Switch Mode Application
• Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application
1
DPAK
1.
Base 2.
Collector 3.
Emitter
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC ICP IB
TC=25°C unless otherwise noted
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Value
700 400 9 4 8 2 1.
1 50 150 -65 ~ 150
Units
V V V A A A W W °C °C
PC Collector Dissipation, Ta = 25°C com Tc = 25°C TJ TSTG Junction Temperature Storage Temperature
* These ratings are...