Part Number
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IXZ12210N50L |
Manufacturer
|
IXYS Corporation |
Description
|
RF Power MOSFET |
Published
|
Oct 29, 2009 |
Detailed Description
|
IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process O...
|
Datasheet
|
IXZ12210N50L
|
Overview
IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0
VDSS ID25
= =
500 V 10 A
Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 V V V V A A A mJ V/ns
125V (operating) 175MHz
200
Per Device...
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