Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03 0.80+0.0.
• Low forward voltage: VF < 0.42 V (at IF = 100 mA)
• Optimum for high frequency rectification because of its short reverse recovery time trr .
0.80±0.05
0.60+0.05
–0.03 0.80+0.05
–0.03 1
(0.60)
0.12+0.05
–0.02
(0.80)
(0.60)
0.01±0.01
5˚
2 0.30±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0+0
–0.05
5˚
Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg
Rating 30 30 100 200 1 125 −55 to +125
Unit V
0.01±0.01
V mA mA A °C °C
1: Anode 2: Cathode SSMini.
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