VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.
3 x 14.
3 mm Doc.
No.
5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 4500 40 80 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate...

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