Part Number
|
IRFM220A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Nov 10, 2009 |
Detailed Description
|
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
|
Datasheet
|
IRFM220A
|
Overview
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
626 Ω (Typ.
)
IRFM220A
BVDSS = 200 V RDS(on) = 0.
8 Ω ID = 1.
13 A
SOT-223
2 1 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
com
Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 oC ) Continuous Drain Current (TA=70 Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipatio...
Similar Datasheet