S amHop Microelectronics C orp.
S T S 2611 F E B 25 2005 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.
8A R DS (ON) S uper high dense cell design for low R DS (ON ).
90 @ V G S = -4.
5V 150 @ V G S = -2.
5V R ugged and reliable.
S OT-26 package.
1 2 5 6 TS OP 6 Top View D D D G 1 2 3 6 5 4 D D S G 3 4 S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www.
DataSheet4U.
com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 -2.
8 -11 -1.
25 1.
25 -55 to 150 Unit V V A A A W C Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed ...

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