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Part Number
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IXGQ20N120BD1 |
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Manufacturer
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IXYS Corporation |
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Description
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High Voltage IGBT |
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Published
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Nov 20, 2009 |
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Detailed Description
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High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns...
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Datasheet
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IXGQ20N120BD1
|
Overview
High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.
4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.
8 VCES 190 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C g
TO-3P (IXGQ)
G
C
E
(TAB)
G = Gate E = Emitter Features
z z
C = Collector TAB = Collector
Mounting torque
1.
13/10 Nm/lb.
in.
300 6
z
Maximum lead temperature for solder...
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