Part Number
|
FLK017XP |
Manufacturer
|
Eudyna Devices |
Description
|
GaAs FET & HEMT Chips |
Published
|
Nov 22, 2009 |
Detailed Description
|
FLK017XP
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) Hi...
|
Datasheet
|
FLK017XP
|
Overview
FLK017XP
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 20.
5dBm(Typ.
) High Gain: G1dB = 8.
0dB(Typ.
) High PAE: ηadd = 26%(Typ.
) Proven Reliability
Source Gate
Drain
DESCRIPTION
The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition
Source
Rating 15 -5
...
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