Part Number
|
HY57V64820HG |
Manufacturer
|
Hynix Semiconductor |
Description
|
4 Banks x 2M x 8Bit Synchronous DRAM |
Published
|
Nov 22, 2009 |
Detailed Description
|
HY57V64820HG
4 Banks x 2M x 8Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronou...
|
Datasheet
|
HY57V64820HG
|
Overview
HY57V64820HG
4 Banks x 2M x 8Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V64820HG is organized as 4banks of 2,097,152x8.
HY57V64820HG is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive ...
Similar Datasheet