Part Number
|
HAF2027 |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel Power MOSFET Power Switching |
Published
|
Nov 26, 2009 |
Detailed Description
|
HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET Power Switching
REJ03G1674-0100 Rev.1.00 May 19, 2008
Descriptio...
|
Datasheet
|
HAF2027
|
Overview
HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET Power Switching
REJ03G1674-0100 Rev.
1.
00 May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features
• • • • Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery)
Outline
RENESAS Package code: PRSS...
Similar Datasheet