PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128512-X
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.
The μPD46128512-X is fabricated with advanced CMOS technology using one-
transistor memory cell.
Features
• 8,388,608 words by 16 bits organization • Asynchronous page read mode • Synchronous read and write mode • Burst length: 8 words / 16 words / continuous • Clock latency: 5, 6, 7, 8, 9, 10 • Burst sequence: Linear burst • Max cl...