PBHV8540T
500 V, 0.
5 A
NPN high-voltage low VCEsat (BISS)
transistor
Rev.
01 — 5 February 2008 Product data sheet
1.
Product profile
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1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040T.
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2 Features
I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified
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3 Applications
I I I I I I I
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