APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes.
A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the APT60GA60JD60 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
Combi (IGBT and Diode) file ...

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