PHK12NQ10T
TrenchMOS™ standard level FET
M3D315
Rev.
01 — 15 September 2003
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Surface mounting package s Low on-state resistance.
1.
3 Applications
s DC-to-DC converter primary side s Portable equipment applications.
1.
4 Quick reference data
s VDS ≤ 100 V s Ptot ≤ 8.
9 W s ID ≤ 11.
6 A s RDSon ≤ 28 mΩ
2.
Pinning information
Table 1: Pin 4 5,6,7,8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description gate (g) drain (d)
g 1 Top view 4
MBK187
Simplified outline
8 5
Symbol
d
com 1,2,3 source (s)
MBB076
...