Part Number
|
ZXMN20B28K |
Manufacturer
|
Diodes |
Description
|
200V N-CHANNEL ENHANCEMENT MODE MOSFET |
Published
|
Dec 17, 2009 |
Detailed Description
|
A Product Line of Diodes Incorporated
ZXMN20B28K
200V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(o...
|
Datasheet
|
ZXMN20B28K
|
Overview
A Product Line of Diodes Incorporated
ZXMN20B28K
200V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 750mΩ @ VGS = 10V 200V 780mΩ @ VGS = 5V ID TA = 25°C 2.
3A 2.
3A
Features and Benefits
• • • • • • •
100% Unclamped Inductive Switch (UIS) test in production High avalanche energy pulse withstand capability Low gate drive voltage (Logic level capable) Low input capacitance Low on-resistance Fast switching speed “Green” Component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency p...
Similar Datasheet