WTM669A
NPN Epitaxial Planar
Transistors
P b Lead(Pb)-Free
1
1.
BASE 2.
COLLECTOR 3.
EMITTER
SOT-89
2
3
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Limits 180 160 5 1.
5 3 1 150 -55 to +150 Unit V V V A W ˚C ˚C
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Device Marking
WTM669A=669A
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=1mA, I E=0
Symbol Min Typ Max Unit
BVCBO BVCEO BVEBO ICBO
180 160 5 -
-
10
V V V µA
Collector-Emitter Breakdown V...