PROCESS
CP289
Power
Transistors
8.
0 Amp
NPN - High Voltage
Transistor Chip
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 167 x 167 MILS 9.
5 MILS 59 x 29 MILS 64 x 28 MILS Al - 45,000Å Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 558 PRINCIPAL DEVICE TYPES MJE13009
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R0 (5- January 2006)
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