2SK3564
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.
7Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
6 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 408 3 4.
0 150 -55~150 A W mJ A mJ °C °C Unit V V V
1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain po...