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Part Number
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MTD1P50E |
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Manufacturer
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Motorola |
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Description
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TMOS POWER FET |
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Published
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Jan 28, 2010 |
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Detailed Description
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET .™ High Energy Po...
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Datasheet
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MTD1P50E
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Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD1P50E/D
Product Preview
TMOS E-FET .
™ High Energy Power FET P–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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