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2SD649

Part Number 2SD649
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operat...
Features ter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V V...
Published Feb 3, 2010
Datasheet 2SD649 PDF File




Features
ter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 μA hFE DC Current Gain IC= 3A; VCE= 10V tf Fall Time ...






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