2STF2280
Low voltage high performance
PNP power
transistor
Preliminary data
Features
■ ■ ■
Low collector-emitter saturation voltage High current gain characteristic Fast switching speed
4 3 2 1
Applications
■ ■
DC-DC converter, voltage regulation General purpose switching equipment
SOT-89
Description
Figure 1.
The device is a
PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.
The resulting
transistor shows exceptional high gain performances coupled with very low saturation voltage.
Internal schematic diagram
com
Table 1.
Device summary
Marking 2280 Package SOT-89 Packaging Tape and reel
Order code 2STF2280
January 2010
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