NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.
com ID MAX (Note 1) 17 A V(BR)DSS 100 V RDS(on) MAX 81 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 17 11 71 62 −55 to +175 17 43 W Unit V V A N−Channel D G A °C A mJ 1 2 4 1 3 S 4 tp = 10 ms Operating and Storage ...

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