STS8DN3LLH5 Dual N-channel 30 V, 0.
0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS8DN3LLH5 VDSS 30 V RDS(on) max 0.
019 Ω ID 10 A (1) 1.
The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8 Application ■ Switching applications Figure 1.
Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
com Table 1.
Device summary Marking...

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