STF26NM60N-H N-channel 600 V, 0.
135 Ω , 20 A MDmesh™ II Power MOSFET in TO-220FP Features Type STF26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max 0.
165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 Application ■ TO-220FP Switching applications Description This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
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Internal schematic diagram $ ' 3...

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