Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
BITDyaQpni=dcwa1li7dS0tihn0g=mle3A--.
,8CP4aorMuritHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.
P,foAIQrRmMa=na7cg.
en5:itdVuBdDeD@C=0l2ip.
80p1iVn%ogl,tPsCr,ohbaanbnielitly on CCDF.
Frequency
Gps (dB)
D Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
18.
8 36.
0
6.
3 --39.
5
940 MHz
18.
7 37.
0
6.
2 --38.
6
960 MHz
18.
6 38.
5
5.
9 --37.
1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 38...