LET9120M
RF power
transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ ■ ■ ■ ■
Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package
Description
The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.
0 GHz.
M252 Epoxy sealed
Figure 1.
Pin connection
1
2
3 5
com
4
1.
Drain 2.
Drain 3.
Source
4.
Gate 5.
Gate
Table 1.
Device summary
Order code LET9120M Package M252 Branding LET9120M
November 2...