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Part Number
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RJH60C9DPD |
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Manufacturer
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Renesas Technology |
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Description
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Silicon N Channel IGBT |
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Published
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Feb 18, 2010 |
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Detailed Description
|
RJH60C9DPD
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in di...
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Datasheet
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RJH60C9DPD
|
Overview
RJH60C9DPD
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
C 4
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Preliminary
REJ03G1838-0100 Rev.
1.
00 Oct 14, 2009
G 1 2
1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor
E
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1...
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