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Part Number
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RJH60D1DPE |
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Manufacturer
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Renesas Technology |
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Description
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Silicon N Channel IGBT |
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Published
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Feb 18, 2010 |
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Detailed Description
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RJH60D1DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in di...
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Datasheet
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RJH60D1DPE
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Overview
RJH60D1DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
com
Preliminary
REJ03G1840-0100 Rev.
1.
00 Oct 14, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to Emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage tempera...
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