|
Part Number
|
RJH60F7ADPK |
|
Manufacturer
|
Renesas Technology |
|
Description
|
Silicon N Channel IGBT |
|
Published
|
Feb 18, 2010 |
|
Detailed Description
|
RJH60F7ADPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low on-state voltage • F...
|
|
Datasheet
|
RJH60F7ADPK
|
Overview
RJH60F7ADPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low on-state voltage • Fast recovery diode
www.
DataSheet4U.
com
Preliminary
REJ03G1837-0100 Rev.
1.
00 Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage tempera...
Similar Datasheet