N-Channel MOS FET FKP250A ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed June, 2007 ■Package---FM100 (TO-3P Full Mold) ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1) S (3) ■Absolute maximum ratings Parameter Symbol Rating (Ta=25°C） Unit Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current ID ±50A A Pulsed Drain Current ID(pulse) *1 ±200A A Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS *2 85 (Tc=25°C) W 400 mJ Avalanche Current IAS 50 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55 to 150 °C *1 PW≤100...

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