N-Channel MOS FET FKP280A September, 2005 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Package---FM100(TO3P Full Mold) ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Designs ew Ｇ(1) Ｄ(2) or N Ｓ(3) ed f ■Absolute maximum ratings end Parameter m Drain to Source Voltage m Gate to Source Voltage o Continuous Drain Current ec Pulsed Drain Current R Maximum Power Dissipation ot Single Pulse Avalanche Energy N Avalanche Current Symbol VDSS VGSS ID ID(pulse) *1 PD EAS *2 IAS (Ta=25°C) Rating Unit 280 Ｖ ±30 Ｖ ±40A Ａ ±160A Ａ 85 (Tc=25°C) Ｗ 400 ｍＪ 40 Ａ Channel Temperature Tch 150 °C Storage Temperature...

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