TPCP8004
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCP8004
Notebook PC Applications Portable Equipment Applications
0.
33 ± 0.
05
0.
05 M A
8
5
Unit: mm
2.
4 ± 0.
1 2.
8 ± 0.
1
• Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.
) • Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.
) • High forward transfer admittance: |Yfs| = 21S (typ.
) • Low leakage current: IDSS = 10μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.
3 to 2.
5V (VDS = 10V, ID = 1mA)
Absolute Maximum Ratings (Ta=25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS=20 kΩ)
VDGR
30
V
Gate-...