TPCP8202
TOSHIBA Field Effect
Transistor
com Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications Motor Drive Applications DC/DC Converters
• • • • • Lead (Pb)-free Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.
) High forward transfer admittance: |Yfs| = 20 S (typ.
) Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) Enhancement model: Vth = 0.
7 to 1.
4V (VDS = 10 V, ID = 200 μA)
0.
475
1 4
Unit: mm
0.
33±0.
05 0.
05 M A
8 5
2.
4±0.
1 0.
65 2.
9±0.
1
B A S
0.
05 M B
0.
8±0.
05 0.
025
S
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Sy...