TPCP8401
TOSHIBA Field Effect
Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π -MOS Ⅵ) com
TPCP8401
○ Switching
Regulator Applications ○ Load Switch Applications
• • • • • Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.
) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.
) • • Low leakage current : P Channel IDSS = −10 µA (VDS = −12 V) Enhancement−mode : P Channel Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA)
1．Source(Nch） 5．Gate(Pch)
S
Unit: mm
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