TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
TPCP8505
TPCP8505
High-Speed Switching Applications DC-DC Converter Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.
3 A) • Low collector-emitter saturation: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 120 ns (typ.
)
0.
33±0.
05
0.
05 M A
8
5
Unit: mm
2.
4±0.
1 2.
8±0.
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
VCEO
50
Emitter-base voltage
VEBO
7
V
DC (Note 1)
IC
Collector current
Pulse (Note 1)
ICP
3.
0 A
5.
0
Base current
IB
0.
3
A
Collector power dissipation (t = 10 s)
t = 10s DC
...