TPCP8J01
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon
NPN Epitaxial Type
com
TPCP8J01
Notebook PC Applications Portable Equipment Applications
• • • • • • Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.
) High forward transfer admittance: P Channel |Yfs| = 9.
6 S (typ.
) Low leakage current: IDSS = −10 μA (VDS = −32 V) Enhancement-mode: P Channel Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
0.
33±0.
05 0.
05 M A
8 5
Unit: mm
2.
4±0.
1 0.
475
1 4
0.
65 2.
9±0.
1
B A
0.
05 M B
0.
8±0.
05
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics Drain-source voltage Drain-gat...