Part Number
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TIM5964-45SL |
Manufacturer
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Toshiba Semiconductor |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Feb 22, 2010 |
Detailed Description
|
MICROWAVE POWER GaAs FET
TIM5964-45SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.5dBm at 5.9GHz to...
|
Datasheet
|
TIM5964-45SL
|
Overview
MICROWAVE POWER GaAs FET
TIM5964-45SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.
5dBm at 5.
9GHz to 6.
4GHz ŋHIGH GAIN
G1dB= 9.
0dB at 5.
9GHz to 6.
4GHz ŋLOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.
5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 9.
0A f= 5.
9 to 6.
4GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test Po= 35.
...
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