Part Number
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TIM5964-4UL |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Feb 22, 2010 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 10.0dB at 5.9...
|
Datasheet
|
TIM5964-4UL
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.
5dBm at 5.
9GHz to 6.
4GHz ・HIGH GAIN
G1dB= 10.
0dB at 5.
9GHz to 6.
4GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 0.
9A f = 5.
9 to 6.
4GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.
5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X R...
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