Part Number
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CY7C1426BV18 |
Manufacturer
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Cypress Semiconductor |
Description
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(CY7C14xxBV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture |
Published
|
Feb 26, 2010 |
Detailed Description
|
CY7C1411BV18, CY7C1426BV18 com CY7C1413BV18, CY7C1415BV18
36-Mbit QDR™-II SRAM 4-Word Burst Architectur...
|
Datasheet
|
CY7C1426BV18
|
Overview
CY7C1411BV18, CY7C1426BV18 com CY7C1413BV18, CY7C1415BV18
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Features
■
Configurations
CY7C1411BV18 – 4M x 8 CY7C1426BV18 – 4M x 9 CY7C1413BV18 – 2M x 18 CY7C1415BV18 – 1M x 36
Separate independent read and write data ports ❐ Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches Echo clocks (CQ and ...
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