LET9150
RF power
transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package
Description
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.
M246 Epoxy sealed
Figure 1.
Pin connection 12
1-2 Drain 4-5 Gate
5
4 3 Source
Table 1.
Device summary Order code
LET9150
Package M246
December 2010
Doc ID 16369 Rev 6
Branding LET9150
1/12
www.
st.
com
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Contents
Contents
LET9150
1 Electrical data ...