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STPSC1006D
600 V power
Schottky silicon carbide diode
Features
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No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is an ultrahigh performance power
Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a
Schottky diode structure with a 600 V rating.
Due to the
Schottky construction no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switchi...