STPSC1006
600 V power
Schottky silicon carbide diode
Features
■ No or negligible reverse recovery ■ Switching behavior independent of
temperature ■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a
Schottky diode structure with a 600 V rating.
Due to the
Schottky construction no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
A K
TO-220...