MMBTSA1235
PNP Silicon Epitaxial Planar
Transistor
for low frequency amplification applications
The
transistor is subdivided into two groups E and F, according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group at -VCE = 6 V, -IC = 0.
1 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IC =...