MMBTSA1298W
PNP Silicon Epitaxial Planar
Transistor
for low frequency power amplifier and power switching applications The
transistor is subdivided into two groups, O and Y according to its DC current gain.
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Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS
Value 35 30 5 800 160 200 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 800 mA Collector Cutoff ...