MMBTSB1197
PNP Silicon Epitaxial Planar
Transistor Low frequency
transistor
The
transistor is subdivided into two groups Q and R according to its DC current gain.
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Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS
SOT-23 Plastic Package Value 40 32 5 800 200 150 -55 to +150 Unit V V V mA mW
O
C C
O
Characteristics at Ta =25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 20 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown...