MMBTSB1198
PNP Silicon Epitaxial Planar
Transistor Low frequency
transistor
The
transistor is subdivided into two groups Q and R, according to its DC current gain.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 80 80 5 0.
5 200 150 -55 to +150 Unit V V V A mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 4 V Collector-Base...