|
Part Number
|
TSM10N60 |
|
Manufacturer
|
Taiwan Semiconductor Company |
|
Description
|
600V N-Channel Power MOSFET |
|
Published
|
Mar 5, 2010 |
|
Detailed Description
|
Preliminary TSM10N60 com 600V N-Channel Power MOSFET
ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
...
|
|
Datasheet
|
TSM10N60
|
Overview
Preliminary TSM10N60 com 600V N-Channel Power MOSFET
ITO-220
Pin Definition: 1.
Gate 2.
Drain 3.
Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
0.
75 @ VGS =10V
ID (A)
4.
75
General Description
The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
● ● ● ● Low RDS(ON) 0.
75Ω (Max.
) Lo...
Similar Datasheet